funded by a large semiconductor company.
With the trend towards 3D integration in semiconductor technology, metrology of buried devices requires the removal of an increasing amount of material. Industry has responded to this need by the commercialization of Xe plasma focused ion beam (FIB) microscopy tools. Compared to Ga ions used in conventional FIBs, Xe beams provide higher currents and, therefore, higher milling speeds, but cause more disorder in the target. The purpose of this project is to develop a 3D simulation tool capable of predicting desired and unwanted topography and compositional changes to the samples. The tool will couple state-of-the-art Monte Carlo simulation of ion-target interaction with continuum simulation of stress relaxation, diffusion, and heat transport. Challenges include quantitative modeling of the various physical mechanisms, dealing with statistical fluctuations and reducing numerical artifacts in the stress relaxation module, and the optimization of simulation efficiency.
· Develop the simulation software, based on an already developed (in-house) Monte Carlo framework and an available proof-of-concept model for 2D stress relaxation via radiation induced viscous flow.
· Model development and calibration using data from the literature.
· Planning and performing experiments and/or collaborating with experimentalists for further model refinement and verification.
What we offer:
- Collaborating with a large semiconductor company.
- Networking and experimental access within the institute, TU Wien, and the EU COST project FIT4NANO, and with the industry partner.
- Sponsored visits to international partners and conferences.
- Working in the center of Vienna (near Karlsplatz) with excellent connection to public transport.
- Salary according to FWF rules (gross monthly salary of ~EUR 2.460,-, 14x per year).
What we expect:
- High motivation for doing research.
- MSc. in Computational Science and Engineering, or in a related field (Physics, Materials Science, Electrical Engineering, Applied Mathematics, Computer Science) with a background in numerical simulation.
- Programming skills preferably in C/C++, Fortran, and/or Python.
- Interest in performing experiments and/or collaborating with experimentalists (background in experimentation is a bonus but not a mandatory requirement).
Start date: immediately; we aim at filling this position no later than July 2023.
Contact: Please send your application including a short motivation letter and your CV to
Ao. Prof. Dr. Gerhard Hobler
Institute of Solid-State Electronics, TU Wien